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| BCR2PM-12 Triac Low Power Use REJ03G0300-0100 Rev.1.00 Aug.20.2004 Features * IT (RMS) : 2 A * VDRM : 600 V * IRGTI, IRGT : 10 mA * Non-Insulated Type * Planar Passivation Type Outline TO-220F 2 3 1 1 2 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal 3 Applications Electric rice cooker, electric pot, and controller for other heater Precautions on Usage When the BCR2PM-12 is used, do not attach the heat radiating fin. Maximum Ratings Parameter Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 Symbol VDRM VDSM Voltage class 12 600 720 Unit V V Rev.1.00, Aug.20.2004, page 1 of 6 BCR2PM-12 Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass Notes: 1. Gate open. Symbol IT (RMS) ITSM I2 t PGM PG (AV) VGM IGM Tj Tstg -- Ratings 2 10 0.41 1 0.1 6 1 - 40 to +125 - 40 to +125 2.0 Unit A A A2s W W V A C C g Conditions Commercial frequency, sine full wave 360 conduction 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Gate trigger voltageNote2 Gate trigger currentNote2 Gate non-trigger voltage Thermal resistance Symbol IDRM VTM VRGT VRGT IRGT IRGT VGD Rth (j-a) Min. -- -- -- -- -- -- 0.1 -- Typ. -- -- -- -- -- -- -- -- Max. 0.5 1.6 2.0 2.0 10 10 -- 40 Unit mA V V V mA mA V C/W Test conditions Tj = 125C, VDRM applied Tj = 25C, ITM = 1.5 A, Instantaneous measurement Tj = 25C, VD = 6 V, RL = 6 , RG = 330 Tj = 25C, VD = 6 V, RL = 6 , RG = 330 Tj = 125C, VD = 1/2 VDRM Junction to ambient, Natural convection Notes: 2. Measurement using the gate trigger characteristics measurement circuit. Rev.1.00, Aug.20.2004, page 2 of 6 BCR2PM-12 Performance Curves Maximum On-State Characteristics 102 7 Tj = 25C 5 3 2 101 7 5 3 2 10 7 5 3 2 10 -1 0 Rated Surge On-State Current 10 Surge On-State Current (A) 9 8 7 6 5 4 3 2 1 00 10 23 5 7 10 1 On-State Current (A) 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 23 5 7 10 2 On-State Voltage (V) Conduction Time (Cycles at 60Hz) Gate Trigger Current (Tj = tC) x 100 (%) Gate Trigger Current (Tj = 25C) Gate Characteristics (II and III) 3 2 Gate Trigger Current vs. Junction Temperature 103 7 5 3 2 IRGT I, IRGT III Typical Example Gate Voltage (V) 101 7 5 3 2 10 7 5 3 2 10 -1 0 PGM = 1W VGM = 6V VGT PG(AV) = 0.1W IGM = 1A 102 7 5 3 2 101 -60 -40-20 0 20 40 60 80 100 120 140 IRGT I, IRGT III 7 VGD = 0.1V 5 0 1 10 2 3 5 710 2 3 5 7102 2 3 5 7103 Gate Current (mA) Junction Temperature (C) Gate Trigger Voltage (Tj = tC) x 100 (%) Gate Trigger Voltage (Tj = 25C) Gate Trigger Voltage vs. Junction Temperature 103 7 5 3 2 102 7 5 3 2 VRGT I Maximum Transient Thermal Impedance Characteristics (Junction to ambient) Transient Thermal Impedance (C/W) 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 10-1 1 Typical Example VRGT III 101 -60 -40-20 0 20 40 60 80 100 120 140 ( 2 Natural Convection No Fins Print Board t = 1.6mm Solder Land : 2mm 3 4 ) 10 2 3 5 710 2 3 5 710 2 3 5 710 2 3 5 7105 Junction Temperature (C) Conduction Time (Cycles at 60Hz) Rev.1.00, Aug.20.2004, page 3 of 6 BCR2PM-12 Allowable Ambient Temperature vs. RMS On-State Current 160 Natural Convection No Fins Print Board t = 1.6mm Solder Land : 2mm Curves apply regardless of conduction angle Resistive, inductive loads Maximum On-State Power Dissipation On-State Power Dissipation (W) 1.8 Ambient Temperature (C) 1.6 1.4 360 Conduction 1.2 Resistive, inductive loads 140 120 100 80 60 40 20 0 0 ( ) 1.0 0.8 0.6 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 RMS On-State Current (A) RMS On-State Current (A) Repetitive Peak Off-State Current (Tj = tC) x 100 (%) Repetitive Peak Off-State Current (Tj = 25C) Repetitive Peak Off-State Current vs. Junction Temperature Holding Current vs. Junction Temperature Holding Current (Tj = tC) x 100 (%) Holding Current (Tj = 25C) 105 7 5 3 2 104 7 5 3 2 103 7 5 3 2 Typical Example 10 7 5 3 2 102 7 5 3 2 3 Typical Example 10 -60 -40-20 0 20 40 60 80 100 120 140 2 101 -60 -40-20 0 20 40 60 80 100 120 140 Junction Temperature (C) Junction Temperature (C) Latching Current vs. Junction Temperature 102 7 5 3 2 101 7 5 3 2 10 7 5 3 2 10-1 -40 0 Breakover Voltage vs. Junction Temperature Breakover Voltage (Tj = tC) x 100 (%) Breakover Voltage (Tj = 25C) 160 140 120 100 80 60 40 20 Typical Example Distribution Latching Current (mA) T2+, G- Typical Example T2-, G- Typical Example 0 40 80 120 160 0 -60 -40-20 0 20 40 60 80 100 120 140 Junction Temperature (C) Junction Temperature (C) Rev.1.00, Aug.20.2004, page 4 of 6 BCR2PM-12 Breakover Voltage vs. Rate of Rise of Off-State Voltage Gate Trigger Current vs. Gate Current Pulse Width Breakover Voltage (dv/dt = xV/s) x 100 (%) Breakover Voltage (dv/dt = 1V/s) Gate Trigger Current (tw) x 100 (%) Gate Trigger Current (DC) 160 140 120 100 80 60 40 20 00 10 2 3 5 7101 2 3 5 7102 2 3 5 7103 III Quadrant I Quadrant Typical Example Tj = 125C 10 7 5 3 2 102 7 5 3 2 10 0 10 1 3 Typical Example IRGT I IRGT III 23 5 7 101 23 5 7 102 Rate of Rise of Off-State Voltage (V/s) Gate Current Pulse Width (s) Gate Trigger Characteristics Test Circuits 6 6 6V V A 330 6V V A 330 Test Procedure II Test Procedure III Rev.1.00, Aug.20.2004, page 5 of 6 BCR2PM-12 Package Dimensions TO-220F EIAJ Package Code Conforms JEDEC Code Mass (g) (reference value) 2.0 Lead Material Cu alloy 10.5 max 5.2 2.8 5.0 1.2 17 3.6 13.5 min 1.3 max 0.8 8.5 3.2 0.2 2.54 2.54 0.5 2.6 4.5 Symbol A A1 A2 b D E e x y y1 ZD ZE Dimension in Millimeters Min Typ Max Note 1) The dimensional figures indicate representative values unless otherwise the tolerance is specified. Order Code Lead form Standard packing Quantity Standard order code Standard order code example BCR2PM-12RA BCR2PM-12RA-A8 Straight type Vinyl sack 100 Type name +RA Lead form Plastic Magazine (Tube) 50 Type name +RA - Lead forming code Note : Please confirm the specification about the shipping in detail. Rev.1.00, Aug.20.2004, page 6 of 6 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. RENESAS SALES OFFICES Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500 Fax: <1> (408) 382-7501 Renesas Technology Europe Limited. Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, United Kingdom Tel: <44> (1628) 585 100, Fax: <44> (1628) 585 900 Renesas Technology Europe GmbH Dornacher Str. 3, D-85622 Feldkirchen, Germany Tel: <49> (89) 380 70 0, Fax: <49> (89) 929 30 11 Renesas Technology Hong Kong Ltd. 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2375-6836 Renesas Technology Taiwan Co., Ltd. FL 10, #99, Fu-Hsing N. Rd., Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. 26/F., Ruijin Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1, Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 http://www.renesas.com (c) 2004. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon .1.0 |
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